A V-BAND, HIGH-GAIN, LOW-NOISE, MONOLITHIC PHEMT AMPLIFIER MOUNTED ON A SMALL HERMETICALLY SEALED METAL PACKAGE

被引：16

作者：

ITOH, Y

HORIIE, Y

NAKAHARA, K

YOSHIDA, N

KATOH, T

TAKAGI, T

机构：

[1] Electro-Optics Microwave Systems Laboratory, Mitsubishi Electric Corporation, Kanagawa

[2] Communication Equipment Works, Mitsubishi Electric Corporation

[3] Optoelectronic and Microwave Devices Laboratory, Mitsubishi Electric Corporation

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 1995年 / 5卷 / 02期

关键词：

D O I：

10.1109/75.342148

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

V-band, high gain, low noise, monolithic amplifiers based on 0.15-mu m AlGaAs/InGaAs/GaAs pseudomorphic HEMT's have been developed. The four-stage amplifier has been assembled on a small hermetically sealed metal package and has achieved a noise figure of 3 dB with a small signal gain of 42.2 dB at 51 GHz. The overall amplifier measured 14.2 x 20.0 x 2.3 mm(3). The two-stage amplifier has been mounted on a carrier-type fixture and has achieved a noise figure of 2.5 dB with a small signal gain of 20.4 dB at 51.5 GHz. These results represent the best noise figure and the highest gain ever achieved by a monolithic amplifier using GaAs- or InP-based HEMT devices at these frequencies.

引用

页码：48 / 49

页数：2

共 8 条

[1]

Ton T.N., Allen B., Wang H., Dow G.S., Barnachea E., Berenz J., A II-band, high gain, low-noise amplifier using PHEMT MMIC, IEEE Microwave and Guided Wave Lett., 2, 2, pp. 63-64, (1992)

[2]

Yoshinaga H., Masuda K., Takagi S., Abe B., Shibata K., Kawasaki H., Tokuda H., Tokaji I., A 94 GHz-band low noise downconverter, 1993 IEEE MTT-S Int. Microwave Symp. 779-782., (1993)

[3]

Lai R., Chang K.W., Wang H., Tan K., Lo D.C., Streit D.C., Liu P.H., Dia R., Berenz J., A High Performance and Low DC Power V-band MMIC LNA using 0.1 pm InGaAs/InAlAs/InP HEMT technology, IEEE Microwave and Guided Wave Lett., 3, 12, (1993)

[4]

Duh K.H., Chao P.C., Liu S.M., Ho P., Kao M.Y., Ballingall J.M., A super low-noise 0.1 µ m T-gate InAlAs-InGaAs-InP HEMT, IEEE 1991., (1991)

[5]

Umeda Y., Enoki T., Ishii Y., Sensitivity analysis of 50-GHz MMIC-LNA on gate-recess depth with InAlAs/InGaAs/InP HEMTs, 1994 IEEE MTT-S Int. Microwave Symp. Dig., pp. 123-126, (1994)

[6]

Yoshida N., Kitano T., Yamamoto Y., Katoh K., Minami H., Takano H., Sonoda T., Takamiya S., Mitsui S., A super low noise V-band AlInAs/InGaAs HEMT processed by selective wet gate recess etching, 1994 IEEE MTT-S Int. Microwave Symp. Dig., pp. 645-648, (1994)

[7]

Katoh T., Yoshida N., Minami H., Kashiwa T., Orisaka S., A 60GHz-band ultra low noise planar-doped HEMT, 1993 IEEE MTT-S Int. Microwave Dig., (1993)

[8]

Kashiwa T., Tanino N., Minami H., Katoh T., Yoshida N., Itoh Y., Mitsui Y., Imatani T., Mitsui S., Design of W-band monolithic low noise amplifiers using accurate HEMT modeling, 1994 IEEE MTT-S Int Microwave Symp. Dig., pp. 289-292, (1994)

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