A STUDY OF CONTRAST BANDS IN BETA-SIC WHISKERS

被引:21
作者
COMER, JJ
机构
[1] Air Force Cambridge Research Laboratories L. G. Hanscom Field, Bedford, MA
关键词
D O I
10.1016/0025-5408(69)90032-4
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Diffraction contrast bands normal to the growth direction in thin β-SiC whiskers are often observed. From selected area diffraction and dark-field electron microscopy it was determined that the bands are caused by microtwins, many of which are less than 50 Å in thickness. Non-parallelism of the bands occurs due to distortion of the lattice planes when the crystal is bent or twisted. Within the streaks resulting from the elongation of intensity regions in a direction normal to the thin lamellae subsidiary maxima can be resolved. © 1969.
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页码:279 / &
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