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STRAIN AND THE INTERPRETATION OF BAND-LINEUP MEASUREMENTS

被引：31
作者：
TERSOFF, J
VAN DE WALLE, CG
机构：
来源：
PHYSICAL REVIEW LETTERS | 1987年 / 59卷 / 08期
关键词：
D O I：
10.1103/PhysRevLett.59.946
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：946 / 946
页数：1
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[4]   THEORETICAL CALCULATIONS OF SEMICONDUCTOR HETEROJUNCTION DISCONTINUITIES [J].
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[5]   THEORETICAL CALCULATIONS OF HETEROJUNCTION DISCONTINUITIES IN THE SI/GE SYSTEM [J].
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