CORRELATION BETWEEN ELECTRICAL AND PHOTOLUMINESCENCE MEASUREMENTS IN HIGH-QUALITY P-TYPE CDTE

被引:15
作者
SETO, S
TANAKA, A
KAWASHIMA, M
机构
关键词
D O I
10.1063/1.341406
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:3658 / 3662
页数:5
相关论文
共 16 条
[11]   CRYSTAL-GROWTH OF LARGE-AREA SINGLE-CRYSTAL CDTE AND CDZNTE BY THE COMPUTER-CONTROLLED VERTICAL MODIFIED-BRIDGMAN PROCESS [J].
SEN, S ;
KONKEL, WH ;
TIGHE, SJ ;
BLAND, LG ;
SHARMA, SR ;
TAYLOR, RE .
JOURNAL OF CRYSTAL GROWTH, 1988, 86 (1-4) :111-117
[12]   HIGH-PURITY CDTE SINGLE-CRYSTALS GROWN FROM SOLUTIONS [J].
TAGUCHI, T ;
SHIRAFUJI, J ;
INUISHI, Y .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (07) :1169-1170
[13]  
TANAKA A, 1986, MATERIAL RES SOC S P, V90, P111
[14]   UNDOPED HIGH-RESISTIVITY CADMIUM TELLURIDE FOR NUCLEAR RADIATION DETECTORS [J].
TRIBOULET, R ;
MARFAING, Y ;
CORNET, A ;
SIFFERT, P .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (06) :2759-2765
[15]   RESISTIVITY MEASUREMENTS ON GERMANIUM FOR TRANSISTORS [J].
VALDES, LB .
PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (02) :420-427
[16]  
ZANIO K, 1978, SEMICONDUCT SEMIMET, V13, P53