THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS

[1] MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 757 - &

[2] BRICE DK, 1971, 1ST P INT C ION IMPL, P101

[3] EISEN FH, 1969, P INT C ATOMIC COLLI, P111

[4] FUJINUMA K, 1969, 1 P C SOL STAT DEV T, P71

[5] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[6] JOHNSON WS, 1969, PROJECTED RANGE STAT

[7] SIGMUND P, 1967, P INT C APPLICATIONS, P215

[8] Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1

[1] MOS FIELD EFFECT TRANSISTORS FORMED BY GATE MASKED ION IMPLANTATION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1968, ED15 (10) : 757 - &

[2] BRICE DK, 1971, 1ST P INT C ION IMPL, P101

[3] EISEN FH, 1969, P INT C ATOMIC COLLI, P111

[4] FUJINUMA K, 1969, 1 P C SOL STAT DEV T, P71

[5] ION IMPLANTATION IN SEMICONDUCTORS .I. RANGE DISTRIBUTION THEORY AND EXPERIMENTS [J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1968, 56 (03): : 295 - +

[6] JOHNSON WS, 1969, PROJECTED RANGE STAT

[7] SIGMUND P, 1967, P INT C APPLICATIONS, P215

[8] Thonsen P.V., 1963, KGL DAN SELSK MAT FY, V33, P1