PHOTOINDUCED GRATING AND INTENSITY DEPENDENCE OF DEFECT GENERATION IN GE-DOPED SILICA OPTICAL FIBER

被引:37
作者
TSAI, TE [1 ]
ASKINS, CG [1 ]
FRIEBELE, EJ [1 ]
机构
[1] GEOCENTERS INC,FT WASHINGTON,MD 20744
关键词
D O I
10.1063/1.107892
中图分类号
O59 [应用物理学];
学科分类号
摘要
Ge E' centers photoinduced in Ge-doped silica by 5 eV photons of various intensities and fluences were found by electron spin resonance to be induced and bleached by one- and two-photon absorption processes, respectively. The observation that Ge E'-type centers are the only paramagnetic centers induced by very low intensity 5 eV photons in Ge-doped silica supports the proposal that Ge E'-type centers are responsible for the photoinduced gratings observed in both Bragg grating and second-harmonic generation fibers.
引用
收藏
页码:390 / 392
页数:3
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