PHOTOINDUCED GRATING AND INTENSITY DEPENDENCE OF DEFECT GENERATION IN GE-DOPED SILICA OPTICAL FIBER

被引：37

作者：

TSAI, TE ^{[1
]}

ASKINS, CG ^{[1
]}

FRIEBELE, EJ ^{[1
]}

机构：

[1] GEOCENTERS INC,FT WASHINGTON,MD 20744

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 04期

关键词：

D O I：

10.1063/1.107892

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Ge E' centers photoinduced in Ge-doped silica by 5 eV photons of various intensities and fluences were found by electron spin resonance to be induced and bleached by one- and two-photon absorption processes, respectively. The observation that Ge E'-type centers are the only paramagnetic centers induced by very low intensity 5 eV photons in Ge-doped silica supports the proposal that Ge E'-type centers are responsible for the photoinduced gratings observed in both Bragg grating and second-harmonic generation fibers.

引用

页码：390 / 392

页数：3

共 14 条

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