EFFECTS OF PRESSURE AND TEMPERATURE ON RD DETECTED GROWTH OSCILLATIONS

We report on the vacuum chemical epitaxy (VCE) growth of GaAs from triethylgallium and arsine at varying partial pressures of arsine and hydrogen. In situ, monolayer growth oscillations were, for the first time, detected in a hydrogen environment using reflectance difference (RD). These results offer the possibility to link surface mechanisms occurring during chemical beam epitaxy (CBE) with those taking place in metalorganic vapour phase epitaxy (MOVPE) and may lead to the observation of growth oscillations also during MOVPE. Finally, the behaviour of the RD signal as a function of substrate temperature is studied over a wider temperature interval than has previously been reported, giving further information about surface processes.