NEW APPROACH TOWARDS CURRENT-VOLTAGE CHARACTERISTICS OF L-H JUNCTION

被引：7

作者：

KASSUR, A ^{[1
]}

机构：

[1] INST ELECTR TECHNOL,DEPT SEMICOND ELECTR,WARSAW,POLAND

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1973年 / 16卷 / 02期

关键词：

D O I：

10.1002/pssa.2210160220

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：507 / 513

页数：7

共 10 条

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[2] Lieb D. P., 1962, IRE T ELECTRON DEV, V9, P143
[3] MARCIAKKOZLOWSK.J, 1971, ELECTRON TECHNOL, V4, P119
[4] PROKHOROV ED, 1964, RADIOTEKH ELEKTRON, V9, P2174
[5] PROKHOROV ED, 1964, RADIOTEKH ELEKTRON, V9, P2014
[6] PULTORAK J, 1971, ELECTRON TECHNOL, V4, P79
[7] SHIELDS J, 1959, 2938E I EL ENG PAP, P342
[8] SIKORSKI S, 1966, ARCH ELEKTROTECH, V16, P439
[9] SIKORSKI S, 1966, ARCH ELEKTROTECH, V16, P703
[10] THE TRANSPORT OF ADDED CURRENT CARRIERS IN A HOMOGENEOUS SEMICONDUCTOR
VANROOSBROECK, W
[J]. PHYSICAL REVIEW, 1953, 91 (02): : 282 - 289