INFLUENCE OF TEMPERATURE ON SENSITIVITY OF SILICON SURFACE BARRIER DETECTORS USED FOR X-RAY AND GAMMA-RAY DOSIMETRY

被引：9

作者：

PETUSHKOV, AA

PARKER, RP

机构：

[1] ROY MARSDEN HOSP, PHYS DEPT, SUTTON, SURREY, ENGLAND

[2] INST CANC RES, SUTTON, SURREY, ENGLAND

来源：

关键词：

D O I：

10.1088/0031-9155/18/2/007

中图分类号：

R318 [生物医学工程];

学科分类号：

0831 ;

摘要：

引用

页码：235 / 245

页数：11

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[9]

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[10]

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