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INFLUENCE OF TEMPERATURE ON SENSITIVITY OF SILICON SURFACE BARRIER DETECTORS USED FOR X-RAY AND GAMMA-RAY DOSIMETRY

被引：9
作者：
PETUSHKOV, AA
PARKER, RP
机构：
[1] ROY MARSDEN HOSP, PHYS DEPT, SUTTON, SURREY, ENGLAND
[2] INST CANC RES, SUTTON, SURREY, ENGLAND
来源：
PHYSICS IN MEDICINE AND BIOLOGY | 1973年 / 18卷 / 02期
关键词：
D O I：
10.1088/0031-9155/18/2/007
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
引用
收藏
页码：235 / 245
页数：11
相关论文
共 16 条
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PETUSHKOV AA, 1968, J RADIOBIOLOGY USSR, V1, P135
[12]  
RESTELLI G, 1968, SEMICONDUCTOR DETECT, P75
[13]   PHOTOVOLTAIC EFFECT PRODUCED IN SILICON SOLAR CELLS BY X-RAYS AND GAMMA RAYS [J].
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[14]   STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF DIFFUSED P-N JUNCTION TYPE TO X RAYS .I. PHOTOVOLTAIC MODE OF OPERATION [J].
SCHARF, K ;
SPARROW, JH .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1964, A 68 (06) :683-+
[15]   STEADY-STATE RESPONSE OF SILICON RADIATION DETECTORS OF DIFFUSED P-N JUNCTION TYPE TO X RAYS .2. PHOTODIODE MODE OF OPERATION [J].
SCHARF, K ;
SPARROW, JH .
JOURNAL OF RESEARCH OF THE NATIONAL BUREAU OF STANDARDS SECTION A-PHYSICS AND CHEMISTRY, 1966, A 70 (02) :181-+
[16]   EXPOSURE RATE MEASUREMENTS OF X- AND GAMMA-RAYS WITH SILICON RADIATION DETECTORS [J].
SCHARF, K .
HEALTH PHYSICS, 1967, 13 (06) :575-+
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