TEMPERATURE-DEPENDENCE OF PEAK ELECTRON VELOCITY AND THRESHOLD FIELD MEASURED ON GAAS GUNN DIODES

被引：6

作者：

MOJZES, I

PODOR, B

BALOGH, I

机构：

[1] HUNGARIAN ACAD SCI,RES INST TECH PHYS,H-1325 BUDAPEST,HUNGARY

[2] TECH UNIV BUDAPEST,FAC ELECT ENGN,DEPT ELECTR DEVICES,H-1521 BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1977年 / 39卷 / 02期

关键词：

D O I：

10.1002/pssa.2210390253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：K123 / K125

页数：3

共 7 条

[1]

BOSTOCK DA, 1969, ELECTR LETT, V5, P623

[2] DETERMINATION OF SEMICONDUCTOR-METAL CONTACT RESISTANCE BY AN ANGLE-DEPENDENT GEOMETRICAL MAGNETORESISTANCE METHOD [J].

GUTAI, L ;

MOJZES, I .

APPLIED PHYSICS LETTERS, 1975, 26 (06) :325-326

[3] TEMPERATURE DEPENDENCE OF VELOCITY FIELD CHARACTERISTICS OF TYPE GALLIUM ARSENIDE [J].

INOUE, M ;

NAKADE, Y ;

SHIRAFUJI, J ;

INUISHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1971, 10 (06) :818-+

[4] INFLUENCE OF IMPURITY SCATTERING ON CURRENT OSCILLATIONS IN GUNN DIODES [J].

PETZEL, B .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1974, 26 (01) :K61-K62

[5] TEMPERATURE DEPENDENCE OF TRANSPORT PROPERTIES OF GALLIUM ARSENIDE DETERMINED BY A MONTE-CARLO METHOD [J].

RUCH, JG ;

FAWCETT, W .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (09) :3843-&

[6] TRANSPORT PROPERTIES OF GAAS [J].

RUCH, JG ;

KINO, GS .

PHYSICAL REVIEW, 1968, 174 (03) :921-+

[7] TEMPERATURE VARIATION OF LOW FIELD ELECTRON MOBILITY IN N-GAAS [J].

SRIVASTAVA, GP ;

MATHUR, PC ;

GOYAL, ML ;

TRIPATHI, KN ;

LOMASH, SK ;

DHALL, AK .

PHYSICS LETTERS A, 1973, A 42 (06) :421-422

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