DEPTH PROFILE ANALYSIS OF HYDROGENATED CARBON LAYERS ON SILICON BY X-RAY PHOTOELECTRON-SPECTROSCOPY, AUGER-ELECTRON SPECTROSCOPY, ELECTRON ENERGY-LOSS SPECTROSCOPY, AND SECONDARY ION MASS-SPECTROMETRY

被引:34
作者
SANDER, P [1 ]
KAISER, U [1 ]
ALTEBOCKWINKEL, M [1 ]
WIEDMANN, L [1 ]
BENNINGHOVEN, A [1 ]
SAH, RE [1 ]
KOIDL, P [1 ]
机构
[1] FRAUNHOFER INST ANGEW FESTKORPERPHYS,D-7800 FREIBURG,FED REP GER
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1987年 / 5卷 / 04期
关键词
D O I
10.1116/1.574623
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
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页码:1470 / 1473
页数:4
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