RANGE AND RANGE STRAGGLING OF ION-IMPLANTED BORON IN CD0.2HG0.8TE

[1] BIERSACK JP, UNPUBLISHED

[2] BRAGG WH, 1905, PHILOS MAG, V10, P5318

[3] DEARNALEY G., 1973, ION IMPLANTATION

[4] PROPERTIES OF HG IMPLANTED HG1-XCDXTE INFRARED DETECTORS [J]. APPLIED PHYSICS, 1978, 17 (01): : 105 - 110

[5] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[6] HOFKER WA, 1975, PHILIPS RES REP S, V8

[7] Keyes R.J., 1977, OPTICAL INFRARED DET

[8] Lanir M, 1978, IEDM TECHNICAL DIGES, P421

[9] LINDHARD J, 1963, KONG DANSKE VID SELS, V33

[10] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175

[1] BIERSACK JP, UNPUBLISHED

[2] BRAGG WH, 1905, PHILOS MAG, V10, P5318

[3] DEARNALEY G., 1973, ION IMPLANTATION

[4] PROPERTIES OF HG IMPLANTED HG1-XCDXTE INFRARED DETECTORS [J]. APPLIED PHYSICS, 1978, 17 (01): : 105 - 110

[5] TYPE CONVERSION AND N-P JUNCTION FORMATION IN HG1-XCDXTE PRODUCED BY PROTON BOMBARDMENT [J]. APPLIED PHYSICS LETTERS, 1971, 18 (08) : 321 - &

[6] HOFKER WA, 1975, PHILIPS RES REP S, V8

[7] Keyes R.J., 1977, OPTICAL INFRARED DET

[8] Lanir M, 1978, IEDM TECHNICAL DIGES, P421

[9] LINDHARD J, 1963, KONG DANSKE VID SELS, V33

[10] LONG D, 1970, SEMICONDUCT SEMIMET, V5, P175