FRANZ-KELDYSH EFFECT IN A 2-DIMENSIONAL SYSTEM

被引：34

作者：

SCHMELLER, A ^{[1
]}

HANSEN, W ^{[1
]}

KOTTHAUS, JP ^{[1
]}

TRANKLE, G ^{[1
]}

WEIMANN, G ^{[1
]}

机构：

[1] WALTER SCHOTTKY INST,D-85748 GARCHING,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 03期

关键词：

D O I：

10.1063/1.111166

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report luminescence and photocurrent experiments on an InGaAs/GaAs quantum well in strong lateral electric fields. The fields are imposed with an interdigitated gate on the crystal surface that consists of an array of metal stripes with a 250 nm period. The small period allows generation of electric fields of about 10(5) V/cm by application of only 1.5 V at the gate electrodes. Strong subgap absorption and oscillations of the interband absorption as function of radiation energy are observed and discussed in view of the Franz-Keldysh effect. The resulting photo-I-V characteristic shows high potential for electro-optic applications.

引用

页码：330 / 332

页数：3

共 15 条

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Blossey D.F., 1972, SEMICONDUCT SEMIMET, V9, P257

[2]

CARDONA M, 1969, SOLID STATE PHYS S, V11, P165

[3] OBSERVATION OF TUNABLE BAND-GAP AND TWO-DIMENSIONAL SUBBANDS IN A NOVEL GAAS SUPER-LATTICE [J].