ELECTROTRANSPORT OF H AND D IN V, NB AND TA AT HIGH HYDROGEN CONCENTRATIONS

The effective charge number Z* of interstitial H and D in V, Nb, and Ta was measured with a resistometric method for hydrogen concentrations between 0.05 and 0.54 H(D)/hostmetal atom ratios. The measurements were made between 147°C and 245 °C in the cubic-phase of the corresponding metal-hydrogen systems. The object of the study was to investigate the dependence of Z* on the hydrogen concentration, and thus on the variations in the electronic structure which are caused by the dissolved hydrogen. At low concentrations, Z* decreases with increasing hydrogen content for all the systems investigated. For concentrations larger than about 0.1, the values of Z* are roughly between 0.5 and 1; they are concentration independent within experimental accuracy. © 1979, Akademische Verlagsgesellschaft, Wiesbaden