ANALYSIS OF CAF2-SI(111) USING COAXIAL IMPACT - COLLISION ION-SCATTERING SPECTROSCOPY

被引：3

作者：

KING, BV

KATAYAMA, M

AONO, M

DALEY, RS

WILLIAMS, RS

机构：

[1] UNIV CALIF LOS ANGELES,DEPT CHEM,LOS ANGELES,CA 90024

[2] UNIV NEWCASTLE,DEPT PHYS,NEWCASTLE,NSW 2308,AUSTRALIA

来源：

VACUUM | 1990年 / 41卷 / 4-6期

关键词：

D O I：

10.1016/0042-207X(90)93827-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High quality epitaxial films of CaF2 have been grown by MBE on Si(111). The films were analysed by coaxial impact-collision ion scattering spectroscopy (CAICISS) and LEED. 10 ML films were found to include CaSi2 presumably due to the loss of F and subsequent Ca reaction with Si diffusing from the substrate. This layer was then overgrown with CaF2 so that thicker films had a bulk-like CaF2 structure and grew in B-type epitaxy. The formation of CaSi2 near the interface may well explain the high Ca scattering yield found near the interface in high energy ion channeling experiments. © 1990.

引用

页码：938 / 940

页数：3

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