PREPARATION AND CHARACTERIZATION OF ZNTE/CDSE SOLAR-CELLS

被引:34
作者
PAL, AK
MONDAL, A
CHAUDHURI, S
机构
[1] Indian Association for the Cultivation of Science, Department of Material Science, Calcutta
关键词
D O I
10.1016/0042-207X(90)93990-Z
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
All thin film solar cells were prepared and investigated by using n-CdSe in conjunction with p-ZnTe. Both the layers were deposited by hot wall vacuum evaporation technique. The devices thus produced were characterized by I-V, C-V and spectral response measurements. The open circuit voltage, the short circuit current and the fill factor were obtained as 450-575 mV, 7-11 mA/cm-2 and 0.30 respectively. The width of the depletion layer and the diffusion potential were calculated to be 0.25 μm and 1.4-1.6 V respectively. Surface photovoltage measurements indicated the diffusion length to be ∼0.1 μm. The photovoltaic performances of the cells produced above were observed to depend critically on the evaporation conditions of both the layers. © 1990.
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页码:1460 / 1462
页数:3
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