EFFECTS OF AR ION LASER IRRADIATION ON MOVPE OF ZNSE USING DMZN AND DMSE AS REACTANTS

被引：18

作者：

YOSHIKAWA, A ^{[1
]}

OKAMOTO, T ^{[1
]}

FUJIMOTO, T ^{[1
]}

机构：

[1] MITSUI PETROCHEM IND CO LTD,CHIBA,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 107卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)90536-E

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The growth mechanism in photoassisted MOVPE of ZnSe on GaAs using DMZn and DMSe has been investigated by using an Ar ion laser as an irradiation source. It has been reconfirmed that photons with higher energies than the band gap of ZnSe at the growth temperature can contribute to a growth rate enhancement. Furthermore, it has been found that the presence of a growing ZnSe layer itself greatly affects the following film growth, that is, (1) the growth rate dramatically increases with increasing thickness of the predeposited ZnSe layer and (2) it also reflects the crystallinity of the predeposited layer. From these results, a plausible growth model utilizing a band diagram of a ZnSe/GaAs junction has been proposed, in which excess holes photoinduced in the ZnSe layer play an important role in the growth rate enhancement at the ZnSe surface.

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页码：653 / 658

页数：6

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