ON THE MASS-ACTION LAWS IN DEGENERATE SEMICONDUCTORS

被引:5
作者
ROSE, FWG
机构
来源
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON | 1958年 / 71卷 / 460期
关键词
D O I
10.1088/0370-1328/71/4/122
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:699 / 701
页数:3
相关论文
共 3 条
[1]   THE MASS ACTION LAWS FOR THE REACTIONS BETWEEN FREE CARRIERS AND IMPURITIES IN SEMICONDUCTORS CONSIDERING THE ELECTRON SPIN [J].
ROSE, FWG .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1957, 70 (08) :801-803
[2]   AN EASY DERIVATION OF THE HOLE LIFETIME IN AN N-TYPE SEMICONDUCTOR WITH ACCEPTOR TRAPS [J].
ROSE, FWG ;
SANDIFORD, DJ .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1955, 68 (11) :894-897
[3]  
SPENKE E, 1955, ELEKTRONISCHE HALBLE, P368