DETERMINATION OF IMPURITY CONCENTRATION OF P-TYPE RECRYSTALLIZED LAYER BY THERMOELECTRIC POWER MEASUREMENTS

被引：5

作者：

SHOJI, M

机构：

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1961年 / 16卷 / 12期

关键词：

D O I：

10.1143/JPSJ.16.2590

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

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页码：2590 / &

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SOLID-STATE ELECTRONICS, 1960, 1 (03) :194-201

[3] IMPURITY CONCENTRATIONS IN THE REGROWN REGION OF IN-GE ALLOYED JUNCTIONS [J].

ROBERTS, FE .

SOLID-STATE ELECTRONICS, 1961, 2 (01) :8-&