THE CHARACTERISTICS OF PHOTOLUMINESCENCE AT GAAS/ALGAAS INTERFACE

被引：5

作者：

YUAN, YR ^{[1
]}

MERZ, JL ^{[1
]}

VAWTER, GA ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF LUMINESCENCE | 1988年 / 40-1卷

关键词：

PHOTOLUMINESCENCE - SEMICONDUCTOR DEVICES - Heterojunctions - SPECTROSCOPY; EMISSION; -; X-RAYS;

D O I：

10.1016/0022-2313(88)90423-1

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

The unusual new spectrum, H-line, has been observed in low temperature photoluminescence (PL) spectra of GaAs edge emission region from lightly or undoped GaAs/AlGaAs epilayers grown by liquid-phase epitaxy(LPE). This phenomena can be related to the energy band offset effect between GaAs and AlGaAs layers. In this paper, the pico-second(ps) life-time of H-line and the relation between H-line and heterojunction properties are reported by the PL and x-ray technology.

引用

页码：755 / 756

页数：2