EFFECT OF ELECTRONEGATIVITY DIFFERENCE ON DEFECT CHEMISTRY IN LONE-PAIR SEMICONDUCTORS

被引：44

作者：

FRITZSCHE, H

GACZI, PJ

KASTNER, M

机构：

[1] MIT,DEPT PHYS,CAMBRIDGE,MA 02139

[2] MIT,CTR MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1978年 / 37卷 / 05期

关键词：

D O I：

10.1080/01418637808226453

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：593 / 600

页数：8

共 8 条

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TAYLOR, PC
[J]. PHYSICAL REVIEW B, 1977, 15 (04): : 2278 - 2294
[2] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS
FRITZSCHE, H
KASTNER, M
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03): : 285 - 292
[3] KASTNER M, 1978, PHILOS MAG, V37, P127, DOI 10.1080/13642817808245313
[4] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS
KASTNER, M
ADLER, D
FRITZSCHE, H
[J]. PHYSICAL REVIEW LETTERS, 1976, 37 (22) : 1504 - 1507
[5] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS
KASTNER, M
FRITZSCHE, H
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02): : 199 - 215
[6] INCREASE IN CONDUCTIVITY OF CHALCOGENIDE GLASSES BY ADDITION OF CERTAIN IMPURITIES
MOTT, NF
[J]. PHILOSOPHICAL MAGAZINE, 1976, 34 (06): : 1101 - 1108
[7] STATES IN GAP IN GLASSY SEMICONDUCTORS
STREET, RA
MOTT, NF
[J]. PHYSICAL REVIEW LETTERS, 1975, 35 (19) : 1293 - 1296
[8] LUMINESCENCE IN AMORPHOUS-SEMICONDUCTORS
STREET, RA
[J]. ADVANCES IN PHYSICS, 1976, 25 (04) : 397 - 453