BURIED DOPANT AND DEFECT LAYERS FOR DEVICE STRUCTURES WITH HIGH-ENERGY ION-IMPLANTATION

被引：41

作者：

CHEUNG, NW

LIANG, CL

LIEW, BK

MUTIKAINEN, RH

WONG, H

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 37-8卷

关键词：

D O I：

10.1016/0168-583X(89)90331-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：941 / 950

页数：10

共 16 条

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[4]

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[5]

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :134-141

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[8] PROGRAMMING OF ROMS AFTER METAL DEFINITION USING MEV ION-IMPLANTATION [J].

PRAMANIK, D ;

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :116-119

[9] MEV-ENERGY B+, P+ AND AS+ ION-IMPLANTATION INTO SI [J].

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NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 21 (2-4) :438-446

[10]

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