DISPERSIVE DIFFUSION OF HYDROGEN IN ALPHA-SI-H - INFLUENCE OF THE FILM DEPOSITION TEMPERATURE

被引：27

作者：

TANG, XM ^{[1
]}

WEBER, J ^{[1
]}

BAER, Y ^{[1
]}

FINGER, F ^{[1
]}

机构：

[1] UNIV NEUCHATEL,INST MICROTECH,CH-2000 NEUCHATEL,SWITZERLAND

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.41.7945

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have measured by the method of elastic-recoil detection analysis the dispersion parameter + of hydrogen diffusion in undoped a-Si:H. We find that a lowering of the deposition temperature of the films increases the value of +. This variation can also be clearly correlated with the increase of the initial concentration of weakly bound hydrogen, which is expected to reflect the disorder of the microstructure. These results will certainly contribute to the elucidation of the dispersive character of the diffusion of hydrogen in the different types of amorphous silicon. © 1990 The American Physical Society.

引用

页码：7945 / 7947

页数：3

共 19 条

[1]

BEYER W, 1985, TETRAHEDRALLY BONDED, P129

[2]

BEYER W, 1989, 4TH P INT PHOT SCI E, V1, P255

[3] SIMS ANALYSIS OF DEUTERIUM DIFFUSION IN HYDROGENATED AMORPHOUS SILICON [J].

CARLSON, DE ;

MAGEE, CW .

APPLIED PHYSICS LETTERS, 1978, 33 (01) :81-83

[4]

CRANK J, 1975, MATH DIFFUSION, pCH2

[5] HIGH-RATE DEPOSITION OF AMORPHOUS HYDROGENATED SILICON - EFFECT OF PLASMA EXCITATION-FREQUENCY [J].

CURTINS, H ;

WYRSCH, N ;

SHAH, AV .

ELECTRONICS LETTERS, 1987, 23 (05) :228-230

[6] STUDY OF SURFACE-INTERFACE AND BULK DEFECT DENSITY IN A-SI-H BY MEANS OF PHOTOTHERMAL DEFLECTION SPECTROSCOPY AND PHOTOCONDUCTIVITY [J].

FAVRE, M ;

CURTINS, H ;

SHAH, AV .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :731-734

[7] HYDROGEN MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J].

GLEASON, KK ;

PETRICH, MA ;

REIMER, JA .

PHYSICAL REVIEW B, 1987, 36 (06) :3259-3267

[8] CONNECTION BETWEEN THE MEYER-NELDEL RELATION AND MULTIPLE-TRAPPING TRANSPORT [J].

JACKSON, WB .

PHYSICAL REVIEW B, 1988, 38 (05) :3595-3598

[9] STRETCHED-EXPONENTIAL RELAXATION ARISING FROM DISPERSIVE DIFFUSION OF HYDROGEN IN AMORPHOUS-SILICON [J].

KAKALIOS, J ;

STREET, RA ;

JACKSON, WB .

PHYSICAL REVIEW LETTERS, 1987, 59 (09) :1037-1040

[10]

KAKALIOS J, 1989, AMORPHOUS SILICON RE, P207

← 1 2 →