CHANNELING STUDY OF EPITAXIAL AL AND AG FILMS ON SI(111) SUBSTRATES

被引：4

作者：

JIN, HS

PARK, KH

YAPSIR, AS

WANG, GC

LU, TM

LUO, L

GIBSON, WM

YAMADA, I

TAKAGI, T

机构：

[1] RENSSELAER POLYTECH INST,DEPT PHYS,TROY,NY 12180

[2] SUNY ALBANY,DEPT PHYS,ALBANY,NY 12222

[3] KYOTO UNIV,ION BEAM ENGN EXPTL LAB,KYOTO 606,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1989年 / 40-1卷

关键词：

D O I：

10.1016/0168-583X(89)90485-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：817 / 822

页数：6

共 15 条

[1]

APPLETON BR, 1977, ION BEAM HDB MATERIA, P67

[2]

Chu Wei-Kan, 1978, BACKSCATTERING SPECT, P54

[3]

FELDMAN LC, 1982, MATERIALS ANAL ION C

[4]

Ignat'ev A. S., 1982, Soviet Technical Physics Letters, V8, P174

[5]

JIN HS, 1987, APPL PHYS LETT, V50, P162

[6]

LeGoues F.K., 1987, MATER RES SOC S P, V94, P121

[7] ATOMIC-STRUCTURE OF THE EPITAXIAL AL-SI INTERFACE [J].

LEGOUES, FK ;

KRAKOW, W ;

HO, PS .

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1986, 53 (06) :833-841

[8]

LEGOUES FK, 1985, LAYERED STRUCTURES E, V37, P395

[9]

LEGOUES FK, 1986, PHILOS MAG A, V53, P883

[10]

PARK KH, 1988, MATER RES SOC S P, V102, P271

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