RASTERED LASER-LIGHT SCATTERING STUDIES DURING PLASMA PROCESSING - PARTICLE CONTAMINATION TRAPPING PHENOMENA

被引:118
作者
SELWYN, GS
HEIDENREICH, JE
HALLER, KL
机构
[1] IBM Research Division, T J. Watson Research Center, New York 10598, P.O. Box 218, Yorktown Heights
[2] IBM General Technology Division, Essex Junction
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1991年 / 9卷 / 05期
关键词
D O I
10.1116/1.577207
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The distribution and transport of particles in materials processing plasmas has been studied with a rastered laser light scattering technique. Contrary to expectation, the distribution of particles in a plasma processing tool is rarely random. Instead, structured clouds of particles form at the plasma/sheath boundary. The effect is attributed to trapping of the particles by weak electric field nonuniformities and the characteristic negative charge of isolated particles in a plasma. Field nonuniformities appear to be influenced by the topography and material design of the tool. For example, the presence of a Si wafer often induces significant particle trapping. Examples of particle trapping in a laboratory system are given, and similar phenomena are also verified in a manufacturing sputter deposition tool operating in a class 100 cleanroom. The implications of particle trapping in plasma processing are discussed.
引用
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页码:2817 / 2824
页数:8
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