EFFECT OF PRESSURE ON ENERGY LEVELS OF IMPURITIES IN SEMICONDUCTORS .1. ARSENIC, INDIUM, AND ALUMINUM IN SILICON

被引：44

作者：

HOLLAND, MG

PAUL, W

机构：

来源：

PHYSICAL REVIEW | 1962年 / 128卷 / 01期

关键词：

D O I：

10.1103/PhysRev.128.30

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：30 / &

共 35 条

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