EXCITON RECOMBINATION IN TE-RICH ZNSEXTE1-X EPILAYERS

被引：30

作者：

NAUMOV, A ^{[1
]}

STANZL, H ^{[1
]}

WOLF, K ^{[1
]}

LANKES, S ^{[1
]}

GEBHARDT, W ^{[1
]}

机构：

[1] AF IOFFE INST,ST PETERSBURG,RUSSIA

来源：

JOURNAL OF APPLIED PHYSICS | 1993年 / 74卷 / 10期

关键词：

D O I：

10.1063/1.355186

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

ZnSexTe1-x epilayers were investigated by means of luminescence, reflectivity, and temperature dependence in the concentration range 0 < x < 0.4. The studied ZnSexTe1-x epilayers with thicknesses of about 1.5 mum were grown on GaAs substrates by metalorganic vapor phase epitaxy. It was found that the luminescence and reflectivity spectra of the mixed crystals are strongly affected by the compositional disorder. A continuous transition from the recombination through free and bound exciton states to the recombination of excitons localized by the compositional fluctuations of the mixed crystal was observed in the concentration region of about x = 0.25. The position of the excitonic band edge was derived from the photoluminescence excitation spectra and from temperature dependence of the emission spectra.

引用

页码：6178 / 6185

页数：8

共 28 条

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