STRAIN DEPENDENCE OF EFFECTIVE MASSES IN TETRAHEDRAL SEMICONDUCTORS

被引：49

作者：

ASPNES, DE ^{[1
]}

CARDONA, M ^{[1
]}

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER

来源：

PHYSICAL REVIEW B | 1978年 / 17卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.17.726

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：726 / 740

页数：15

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