OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY

被引：56

作者：

KRESSEL, H

HAWRYLO, FZ

ABRAHAMS, MS

BUIOCCHI, CJ

机构：

来源：

关键词：

D O I：

10.1063/1.1655934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5139 / &

共 16 条

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[3] GORYUNOVA NA, 1965, CHEMISTRY DIAMONDLIK, P156
[4] INFRARED TRANSMISSION + FLUORESCENCE OF DOPED GALLIUM ARSENIDE
HILL, DE
[J]. PHYSICAL REVIEW A-GENERAL PHYSICS, 1964, 133 (3A): : A866 - &
[5] LUMINESCENCE DUE TO GE ACCEPTORS IN GAAS
KRESSEL, H
HAWRYLO, FZ
LEFUR, P
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) : 4059 - +
[6] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY
KRESSEL, H
DUNSE, JU
NELSON, H
HAWRYLO, FZ
[J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) : 2006 - &
[7] KRESSEL H, 1968, MAY EL SOC M BOST
[8] 1.0- AND 1.28-EV EMISSION FROM GAAS DIODES
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AUKERMAN, LW
[J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (04) : 1788 - &
[9] NELSON H, 1963, RCA REV, V24, P603
[10] PANNISH MB, 1966, SOLID STATE ELECTRON, V9, P311