PHOTOLUMINESCENCE CHARACTERIZATION OF ZNSE DOPED WITH GA BY BULK AND PLANAR DOPING TECHNIQUES IN MOLECULAR-BEAM EPITAXY

被引：46

作者：

SKROMME, BJ

SHIBLI, SM

DEMIGUEL, JL

TAMARGO, MC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 10期

关键词：

D O I：

10.1063/1.343342

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3999 / 4005

页数：7

共 38 条

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