EXPERIMENTAL TEST OF THE TRANSITION LAYER MODEL OF ATOMIC LAYER EPITAXY

被引：13

作者：

JUZA, P

SITTER, H

HERMAN, MA

机构：

来源：

APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 15期

关键词：

D O I：

10.1063/1.99988

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1396 / 1398

页数：3

共 16 条

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[4] SURFACE-MORPHOLOGY OF CDTE-FILMS GROWN ON CDTE (111) SUBSTRATES BY ATOMIC LAYER EPITAXY [J].

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[5] GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .3. REEVAPORATION OF CD AND TE FROM CDTE(111) SURFACES AND THICK ELEMENTAL DEPOSITS MONITORED BY QUADRUPOLE-MASS SPECTROMETRY [J].

HERMAN, MA ;

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CRYSTAL RESEARCH AND TECHNOLOGY, 1988, 23 (03) :307-317

[6] GROWTH-MECHANISM IN ATOMIC LAYER EPITAXY .2. A MODEL OF THE GROWTH-PROCESS OF CDTE ON CDTE(111) SUBSTRATES [J].

HERMAN, MA ;

JYLHA, O ;

PESSA, M .

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[7] ATOMIC LAYER EPITAXY OF CD1-XMNXTE GROWN ON CDTE (111)B SUBSTRATES [J].

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[8]

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[9]

MAR HA, 1984, APPL PHYS LETT, V44, P899

[10]

NISHIZAWA J, 1986, J VAC SCI TECHNOL A, V4, P706, DOI 10.1116/1.573838

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