RECOMBINATION PARAMETERS IN LOW-RESISTIVITY GAMMA-IRRADIATED TYPE GERMANIUM

被引：7

作者：

SROUR, JR

机构：

来源：

PHYSICAL REVIEW B-SOLID STATE | 1970年 / 2卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.2.4977

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：4977 / +

页数：1

共 28 条

[11]

CURTIS OL, 1968, RADIATION EFFECTS SE, P331

[12]

CURTIS OL, AD685883

[13] RECOMBINATION CENTERS IN GAMMA-IRRADIATED ARSENIC-DOPED GERMANIUM [J].

GERMANO, CA ;

CURTIS, OL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1968, NS15 (06) :34-+

[14] EFFECT OF INJECTION LEVEL ON CARRIER LIFETIME IN NEUTRON-IRRADIATED GERMANIUM [J].

GERMANO, CA ;

CURTIS, OL .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1966, NS13 (06) :47-+

[15] ELECTRON-HOLE RECOMBINATION IN GERMANIUM [J].

HALL, RN .

PHYSICAL REVIEW, 1952, 87 (02) :387-387

[16] TRAPPING OF MINORITY CARRIERS IN SILICON .2. N-TYPE SILICON [J].

HAYNES, JR ;

HORNBECK, JA .

PHYSICAL REVIEW, 1955, 100 (02) :606-615

[17] FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF GE [J].

MACFARLANE, GG ;

MCLEAN, TP ;

QUARRINGTON, JE ;

ROBERTS, V .

PHYSICAL REVIEW, 1957, 108 (06) :1377-1383

[18] DECAY OF EXCESS CARRIERS IN SEMICONDUCTORS [J].

NOMURA, KC ;

BLAKEMORE, JS .

PHYSICAL REVIEW, 1958, 112 (05) :1607-1615

[19] DECAY OF EXCESS CARRIERS IN SEMICONDUCTORS .2. [J].

NOMURA, KC ;

BLAKEMORE, JS .

PHYSICAL REVIEW, 1961, 121 (03) :734-&

[20] CARRIER LIFETIME IN SEMICONDUCTORS FOR TRANSIENT CONDITIONS [J].

SANDIFORD, DJ .

PHYSICAL REVIEW, 1957, 105 (02) :524-524

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