EFFECTS OF HEAT PRETREATMENT OF STARTING MATERIALS ON THE OPTICAL TRANSPARENCY OF CDGEAS2 CRYSTALS

被引:11
作者
BORSHCHEVSKY, AS
ROUTE, RK
FEIGELSON, RS
机构
关键词
D O I
10.1016/0025-5408(80)90044-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:409 / 414
页数:6
相关论文
共 16 条
[1]  
BORSHCHEVSKII AS, 1972, THESIS MOSCOW
[2]  
BORSHCHEVSKII AS, 1979, SEP CHEM TECHN P AC, P188
[3]  
BORSHCHEVSKII AS, 1979, TROINYE POLUPROVODNI, P8
[4]   CDGEAS2-A NEW NONLINEAR CRYSTAL PHASEMATCHABLE AT 10.6 MU-M [J].
BYER, RL ;
KILDAL, H ;
FEIGELSON, RS .
APPLIED PHYSICS LETTERS, 1971, 19 (07) :237-+
[5]   SOURCES OF CONTAMINATION IN GAAS CRYSTAL GROWTH [J].
EKSTROM, L ;
WEISBERG, LR .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (04) :321-327
[6]  
Feigelson R. S., 1975, J PHYS PARIS S9, V36, pC3
[7]  
GERSHENZON M, 1968, 1966 P INT C LUM BUD, P17
[8]   OPTICAL AND ELECTRICAL-PROPERTIES OF CDGEAS2 [J].
ISELER, GW ;
KILDAL, H ;
MENYUK, N .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (06) :737-755
[9]  
MALYSHEV VA, 1974, SOV PHYS SEMICOND+, V8, P92
[10]  
MOLDOVANOVA M, 1968, 1966 P INT C LUM BUD, P125