FAST AND SLOW INTERFACE STATE DISTRIBUTIONS ON (100)SI-SIO2 AND (111)SI-SIO2 SURFACES FOLLOWING NEGATIVE BIAS STRESS

The distribution of fast and slow interface states through the silicon bandgap has been measured for the (100) and (111) Si:SiO2 surfaces. The measurements were carried out before and after damage to the interface using negative bias stress. The results show that both fast and slow states are more easily created on the (111) surface. The shape of the distribution through the gap is similar for both surfaces with the slow state density rising strongly towards the conduction band edge.