OPTIMUM BARITT STRUCTURE

被引:7
作者
LURYI, S
KAZARINOV, RF
机构
关键词
D O I
10.1016/0038-1101(82)90185-X
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:943 / 945
页数:3
相关论文
共 8 条
[1]   POWER LIMITATION OF PUNCHTHROUGH INJECTION TRANSIT-TIME OSCILLATORS [J].
DELAGEBEAUDERF, D ;
LACOMBE, J .
ELECTRONICS LETTERS, 1973, 9 (23) :538-539
[2]  
Delagebeaudeuf D., 1969, Revue Technique Thomson-CSF, V1, P309
[3]   MULTILAYERED ION-IMPLANTED BARITT DIODES WITH IMPROVED EFFICIENCY [J].
EKNOYAN, O ;
YANG, ES ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1977, 20 (04) :291-295
[4]   CHARGE INJECTION OVER TRIANGULAR BARRIERS IN UNIPOLAR SEMICONDUCTOR STRUCTURES [J].
KAZARINOV, RF ;
LURYI, S .
APPLIED PHYSICS LETTERS, 1981, 38 (10) :810-812
[5]  
KAZARINOV RF, UNPUB
[6]  
MALIK RJ, 1980, ELECTRON LETT, V16, P837
[7]  
SZE SM, 1981, PHYSICS SEMICONDUCTO, pCH10
[8]   AVALANCHE-TRANSIT DIODE AND ITS USE IN MICROWAVES [J].
TAGER, AS .
SOVIET PHYSICS USPEKHI-USSR, 1967, 9 (06) :892-+