PREPARATION OF CO FERRITE THIN-FILMS WITH LARGE PERPENDICULAR AND INPLANE COERCIVITIES BY FACING TARGETS SPUTTERING

被引：32

作者：

MATSUSHITA, N

NAKAGAWA, S

NAOE, M

机构：

[1] Dept. of Physical Electronics, Tokyo Institute of Technology 2-12-1 Ookayama, Meguro-ku Tokyo 152, JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1992年 / 28卷 / 05期

关键词：

D O I：

10.1109/20.179728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films with cobalt ferrite layer on ZnO underlayer were prepared at substrate temperature T(s) in range of 80-600-degrees-C by Facing Targets Sputtering apparatus. Crystallites in specimen films revealed almost perfect orientation of (111) plane even at T(s) as low as 80-degrees-C. Coercivity H(c) and saturation magnetization M(s) were strongly dependent on T(s). H(c) exhibited maximum and minimum values of 3300 and 400 Oe at T(s) or 300 and 600-degrees-C, respectively. M(s) increased with increase of T(s) and was 367 emu/cc at T(s) of 600-degrees-C. We conclude that these films should be applicable for magnetic recording disks with ultra-high density.

引用

页码：3108 / 3110

页数：3

共 6 条

[1] OPTICAL SIGNAL-PROCESSING WITH MAGNETOSTATIC WAVES [J].