LOW-ENERGY ERBIUM IMPLANTED SI3N4/SIO2/SI WAVE-GUIDES

被引：3

作者：

LUMHOLT, O

BERNAS, H

CHABLI, A

CHAUMONT, J

GRAND, G

VALETTE, S

机构：

[1] CEA,TECHNOL AVANCEES,LETI,DPT OPTRON,CEN-G,F-38041 GRENOBLE,FRANCE

[2] CSNSM,F-91405 ORSAY,FRANCE

来源：

ELECTRONICS LETTERS | 1992年 / 28卷 / 24期

关键词：

ION IMPLANTATION; OPTICAL WAVE-GUIDES; LASERS;

D O I：

10.1049/el:19921441

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoluminescence spectroscopy studies of low energy erbium and erbium/oxygen-implanted silicon-nitride waveguides are compared. Emission spectra show peaks at 1533 and 1548 nm. The optimum annealing temperature is determined to be 1175-degrees-C, yielding lifetimes up to 7 ms and a several decade intensity increase. Er implantation yields more than 40% longer lifetime and higher intensity than Er/O.

引用

页码：2242 / 2243

页数：2

共 4 条

[1] LOW-LOSS SI3N4-SIO2 OPTICAL WAVE-GUIDES ON SI [J].

HENRY, CH ;

KAZARINOV, RF ;

LEE, HJ ;

ORLOWSKY, KJ ;

KATZ, LE .

APPLIED OPTICS, 1987, 26 (13) :2621-2624

[2]

KITAGAWA T, 1992, P OPTICAL AMPLIFIERS

[3] OPTICAL DOPING OF WAVE-GUIDE MATERIALS BY MEV ER IMPLANTATION [J].

POLMAN, A ;

JACOBSON, DC ;

EAGLESHAM, DJ ;

KISTLER, RC ;

POATE, JM .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (07) :3778-3784

[4] ER3+ GLASS WAVE-GUIDE AMPLIFIER AT 1.5 MU-M ON SILICON [J].

SHMULOVICH, J ;

WONG, A ;

WONG, YH ;

BECKER, PC ;

BRUCE, AJ ;

ADAR, R .

ELECTRONICS LETTERS, 1992, 28 (13) :1181-1182

← 1 →