Electrical conductivity in ferroelectric thin films

被引：55

作者：

Wouters, DJ

Willems, GJ

Maes, HE

机构：

[1] IMEC, B-3001 Leuven

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 29卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00155-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The possible conduction processes in Pt-PZT-Pt capacitors are analyzed, based on the electronic properties of PZT and of the Pt-PZT interface. PZT behaves as an insulator, resulting in carrier-blocking Pt-PZT contacts, except when mobile ionic defects can provide the space charge to prevent full depletion. The possibilities of hole and electron injection are discussed. The current-degradation regime, while being caused by ion motion, is shown to be interface- and not bulk-controlled.

引用

页码：249 / 256

页数：8

共 27 条

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