SURFACE RECOMBINATION, SURFACE-STATES AND FERMI LEVEL PINNING

被引：19

作者：

MOISON, JM

BENSOUSSAN, M

机构：

来源：

REVUE DE PHYSIQUE APPLIQUEE | 1987年 / 22卷 / 05期

关键词：

D O I：

10.1051/rphysap:01987002205029300

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：293 / 297

页数：5

共 14 条

[1] RECOMBINATION AT SEMICONDUCTOR SURFACES AND INTERFACES [J].

ASPNES, DE .

SURFACE SCIENCE, 1983, 132 (1-3) :406-421

[2] INP SURFACE-STATES AND REDUCED SURFACE RECOMBINATION VELOCITY [J].

BRILLSON, LJ ;

SHAPIRA, Y ;

HELLER, A .

APPLIED PHYSICS LETTERS, 1983, 43 (02) :174-176

[3] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161

[4]

MAIGNE P, 1986, THESIS PARIS

[5]

Many A, 1971, SEMICONDUCTOR SURFAC

[6] EPITAXIAL REGROWTH OF AN INAS SURFACE ON INP - AN EXAMPLE OF ARTIFICIAL SURFACES [J].

MOISON, JM ;

BENSOUSSAN, M ;

HOUZAY, F .

PHYSICAL REVIEW B, 1986, 34 (03) :2018-2021

[7] ELECTRONIC-PROPERTIES OF THE INP(100) SURFACE [J].

MOISON, JM ;

BENSOUSSAN, M .

SURFACE SCIENCE, 1986, 168 (1-3) :68-73

[8] INFLUENCE OF THE NEAR-BAND-EDGE SURFACE-STATES ON THE LUMINESCENCE EFFICIENCY OF INP [J].

MOISON, JM ;

VANROMPAY, M ;

BENSOUSSAN, M .

APPLIED PHYSICS LETTERS, 1986, 48 (20) :1362-1364

[9]

MOISON JM, 1986, 18TH P INT C PHYS SE

[10] SURFACE-TREATMENT EFFECT ON PHOTO-LUMINESCENCE OF INP [J].

NAGAI, H ;

NOGUCHI, Y .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) :1544-1545

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