FABRICATION OF MONOLITHIC TWIN-GAINAS PIN PHOTODIODE FOR BALANCED DUAL-DETECTOR OPTICAL COHERENT RECEIVERS

被引：15

作者：

WADA, O

MIURA, S

MIKAWA, T

AOKI, O

KIYONAGA, T

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 09期

关键词：

D O I：

10.1049/el:19880348

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：514 / 516

页数：3

相关论文

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[2] CHIKAMA T, 1987, 1987 P ECOC HELS, V1, P349
[3] BALANCED DUAL-DETECTOR RECEIVER FOR OPTICAL HETERODYNE COMMUNICATION AT GBIT/S RATES
KASPER, BL
BURRUS, CA
TALMAN, JR
HALL, KL
[J]. ELECTRONICS LETTERS, 1986, 22 (08) : 413 - 415
[4] PLANAR, EMBEDDED INP/GALNASP-I-N PHOTODIODE WITH VERY HIGH-SPEED RESPONSE CHARACTERISTICS
MIURA, S
KUWATSUKA, H
MIKAWA, T
WADA, O
[J]. APPLIED PHYSICS LETTERS, 1986, 49 (22) : 1522 - 1524
[5] OLIVER BM, 1961, P IRE, V49, P1960