BULK AND THIN FILM SWITCHING AND MEMORY EFFECTS IN SEMICONDUCTING CHALCOGENIDE GLASSES

被引：47

作者：

STOCKER, HJ

机构：

[1] Texas Instruments Incorporated, Dallas

来源：

APPLIED PHYSICS LETTERS | 1969年 / 15卷 / 02期

关键词：

D O I：

10.1063/1.1652900

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Switching phenomena take place in thick bulk samples of semiconducting glass, once a path of devitrified material is established. Potential probe and infrared microradiometer measurements reveal that the switching action takes place in a small region somewhere along this path. Application of voltage pulses can move this region to a different position. Evidence of partial devitrification and melting is also found in thin film switches made from many different glass compositions. Memory switching has also been observed in all bulk and thin film experiments to date. Since the characteristics of bulk and thin film switching are remarkably similar, doubt is cast upon the interpretation of switching phenomena as due to electronic properties of amorphous semiconductors. © 1969 The American Institute of Physics.

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