ELECTRON, ION, AND PHOTON-BEAM INDUCED REDUCTION OF SNO2(110) - POWER DISSIPATION THRESHOLDS

被引：3

作者：

ERICKSON, JW ^{[1
]}

机构：

[1] USN,CTR WEAP,RES DEPT,DIV PHYS,CHINA LAKE,CA 93555

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 05期

关键词：

D O I：

10.1116/1.584472

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1265 / 1274

页数：10

共 9 条

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[2]

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[4]

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SEMANCIK, S .

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[6] METAL-SEMICONDUCTOR INTERFACES ON SNO2(110) [J].

ERICKSON, JW ;

FRYBERGER, TB ;

SEMANCIK, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1593-1598

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[9] HYPERTHERMAL GAS-SURFACE SCATTERING [J].

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JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :889-894

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