THE EFFECT OF HEAVY-ION IRRADIATION ON AN IMPLANTED-SI POSITION-SENSITIVE DETECTOR

被引:4
作者
KATO, N
机构
[1] Department of Physics, Faculty of Science, Kyushu University, Fukuoka
关键词
D O I
10.1016/0168-583X(90)90563-A
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Characteristics of an implanted-Si position-sensitive detector, which was designed for the Coulomb excitation experiment with NORDBALL, were investigated while varying the amount of the heavy-ion flux injected into the detector. Marked effects on the pulse height defect as well as increased reverse current were observed around a fluence of 1.5 × 109 particles/cm2. Under the same condition, severe deterioration of the position spectrum was not observed. © 1990.
引用
收藏
页码:425 / 430
页数:6
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