EFFICIENT ELECTROLUMINESCENCE FROM INP DIODES GROWN BY LPE FROM SN SOLUTIONS

被引：19

作者：

SHAY, JL

BACHMANN, KJ

BUEHLER, E

机构：

[1] BELL TEL LABS INC,HOLMDEL,NJ 07733

[2] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1974年 / 24卷 / 04期

关键词：

D O I：

10.1063/1.1655149

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：192 / 194

页数：3

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[1] BACHMANN KJ, TO BE PUBLISHED
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[3] HALL R, 1973, GALLIUM ARSENIDE REL, P177
[4] ULTIMATE LOWER LIMIT OF ATTENUATION IN GLASS OPTICAL WAVEGUIDES
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[5] EFFICIENT ELECTROLUMINESCENCE FROM GAAS DIODES AT 300 DEGREES K
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[6] CDSNP2-INP HETERODIODES FOR NEAR-INFRARED LIGHT-EMITTING DIODES AND PHOTOVOLTAIC DETECTORS
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[J]. APPLIED PHYSICS LETTERS, 1973, 23 (05) : 226 - 228
[7] SHAY JL, TO BE PUBLISHED