PHOTOLUMINESCENCE SPECTROSCOPY OF ION-IMPLANTED 3C-SIC GROWN BY CHEMICAL VAPOR-DEPOSITION

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58

[3] LUMINESCENCE OF DONAR-ACCEPTOR PAIRS IN CUBIC SIC [J]. PHYSICAL REVIEW B, 1970, 2 (12): : 4959 - &

[4] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN CUBIC SIC - LOCALIZED MODES AND JAHN-TELLER EFFECT [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1843 - &

[5] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[6] CHOYKE WW, 1971, PHYS REV B, V4, P6

[7] EDMOND JA, 1985, P MATERIALS RES SOC, V52, P157

[8] FREITAS JA, 1985, P MATERIALS RES SOC, V46, P581

[9] GEITSI II, 1970, SOV PHYS SEMICOND+, V4, P744

[10] HAYNES JH, 1960, PHYS REV LETT, V4, P7

[1] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J]. APPLIED PHYSICS LETTERS, 1984, 44 (05) : 525 - 527

[2] Choyke W. J., 1977, International Conference on Radiation Effects in Semiconductors, P58

[3] LUMINESCENCE OF DONAR-ACCEPTOR PAIRS IN CUBIC SIC [J]. PHYSICAL REVIEW B, 1970, 2 (12): : 4959 - &

[4] PHOTOLUMINESCENCE OF RADIATION DEFECTS IN CUBIC SIC - LOCALIZED MODES AND JAHN-TELLER EFFECT [J]. PHYSICAL REVIEW B, 1971, 4 (06): : 1843 - &

[5] OPTICAL PROPERTIES OF CUBIC SIC - LUMINESCENCE OF NITROGEN-EXCITON COMPLEXES + INTERBAND ABSORPTION [J]. PHYSICAL REVIEW, 1964, 133 (4A): : 1163 - +

[6] CHOYKE WW, 1971, PHYS REV B, V4, P6

[7] EDMOND JA, 1985, P MATERIALS RES SOC, V52, P157

[8] FREITAS JA, 1985, P MATERIALS RES SOC, V46, P581

[9] GEITSI II, 1970, SOV PHYS SEMICOND+, V4, P744

[10] HAYNES JH, 1960, PHYS REV LETT, V4, P7