LOW-HIGH HOMOJUNCTION IN THE STATIONARY STATE

This work develops an analytical description of the electrostatic (stationary state) properties of an abrupt low-high homojunction within the context of Maxwell-Boltzmann statistics (nondegenerate semiconductors). The considerations are based on an application of the electrostatic law of abrupt junctions and summarized by a generalized approximate solution of Poisson's equation as an analytical representation combined with adapted numerical procedures. Low-field calculations give a set of universal curves which may be used to find direct relationships between the different distributions at any point within the free carrier space charge. This approach, having a relatively simple behavior as well as very high accuracy, shows especially the macroscopic features of the accumulated space charge on the lightly doped side and is especially useful in junction modelization and numerical simulations.