LOW-LOSS INTRACAVITY ALAS/ALGAAS SATURABLE BRAGG REFLECTOR FOR FEMTOSECOND MODE-LOCKING IN SOLID-STATE LASERS

被引：116

作者：

TSUDA, S

KNOX, WH

DESOUZA, EA

JAN, WY

CUNNINGHAM, JE

机构：

[1] AT&T Bell Laboratories, Holmdel, NJ, 07733-3030

来源：

OPTICS LETTERS | 1995年 / 20卷 / 12期

关键词：

D O I：

10.1364/OL.20.001406

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We introduce a new low-loss semiconductor structure for femtosecond intracavity mode locking in low-gain solid-state lasers. This monolithic device can be engineered to exhibit specific saturation characteristics desirable for mode locking solid-state lasers. Self-starting 90-fs pulses are obtained with Ti:sapphire and diode-pumped Cr:LiSAF lasers. We discuss mode-locking mechanisms in quantum-well passively mode-locked solid-state lasers.

引用

页码：1406 / 1408

页数：3

共 10 条

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[7] FEMTOSECOND AC STARK-EFFECT IN SEMICONDUCTOR QUANTUM WELLS - EXTREME LOW-INTENSITY AND HIGH-INTENSITY LIMITS
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[8] DIODE-PUMPED 100-FS PASSIVELY MODE-LOCKED CR-LISAF LASER WITH AN ANTIRESONANT FABRY-PEROT SATURABLE ABSORBER
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[J]. OPTICS LETTERS, 1994, 19 (24) : 2143 - 2145
[9] GENERATION OF PULSES AS SHORT AS 93 FS FROM SELF-STARTING FEMTOSECOND CR-LISRALF6 LASERS BY EXPLOITING MULTIPLE-QUANTUM-WELL ABSORBERS
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[10] 60-FSEC PULSE GENERATION FROM A SELF-MODE-LOCKED TI-SAPPHIRE LASER
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