EPITAXIAL-GROWTH AND PROPERTIES OF YBA2CU3O7-DELTA/NDGAO3/YBA2CU3O7-DELTA TRILAYER STRUCTURES

被引:18
作者
BOIKOV, Y [1 ]
BRORSSON, G [1 ]
CLAESON, T [1 ]
IVANOV, ZG [1 ]
机构
[1] AF IOFFE PHYSICOTECH INST,LENINGRAD,USSR
关键词
D O I
10.1063/1.105917
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have used laser deposition to make YBa2Cu3O7-delta/NdGaO3/YBa2Cu3O7-delta trilayer structures. NdGaO3 films grow epitaxially on well lattice-matched substrates, like SrTiO3 (100), and on c-axis oriented YBa2Cu3O7-delta films. Epitaxial YBa2Cu3O7-delta films were grown on top of the NdGaO3 films, and there was no significant difference in critical temperature between top and bottom layers of the trilayer structures. The resistivity of a 300-nm-thick NdGaO3 interlayer was as high as 10(8)OMEGA-cm at 300 K.
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页码:2606 / 2608
页数:3
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