SEMICONDUCTOR-LASER ANALYSIS - GENERAL-METHOD FOR CHARACTERIZING DEVICES OF VARIOUS CROSS-SECTIONAL GEOMETRIES

被引：36

作者：

SHORE, KA ^{[1
]}

ROZZI, TE ^{[1
]}

INTVELD, GH ^{[1
]}

机构：

[1] EINDHOVEN UNIV TECHNOL,DEPT MATH,EINDHOVEN,NETHERLANDS

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 05期

关键词：

Compendex;

D O I：

10.1049/ip-i-1.1980.0046

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

LASERS, SEMICONDUCTOR

引用

页码：221 / 229

页数：9

共 10 条

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[7] 2-DIMENSIONAL ANALYSIS OF GAAS DOUBLE HETERO STRIPE-GEOMETRY LASER [J].

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[8]

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[9]

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[10]

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